价 格: | 面议 | |
型号/规格: | UT3413 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-23 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UT3413 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UT3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) < 60mΩ @VGS = 10 V* RDS(ON) < 70mΩ @VGS = 4.5 V* RDS(ON) < 155mΩ @VGS = 2.5 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
1,UTC(台湾友顺)品牌高品质低压MOS管。 2,现货供应!全国支持支付宝,珠三角支持快递代收款。 50 Amps, 60 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 50N06 is three-terminal silicon device with currentconduction capability of about 50A, fast switching speed. Lowon-state resistance, breakdown voltage rating of 60V, and maxthreshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switchingmode power appliances.FEATURES* RDS(ON) =23mΩ@VGS= 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capability