价 格: | 面议 | |
型号/规格: | NCE75H21T | |
品牌/商标: | NCE(新洁能) | |
封装形式: | TO-247 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
DESCRIPTION
The NCE75H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● V=75V,I=210A
RDS(ON) < 4m? @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
100% UIS TESTED!
100%ΔVds TESTED!
1,我们是UTC(台湾友顺)品牌香港和大陆地区一级代理商。特价销售UTC(台湾友顺)高品质MOS管。 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC convertersand bridge circuits.FEATURES* RDS(ON) =1.2Ω@VGS= 10 V* Ultra low gate charge ( typical 28 nC )* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness