场效应管 MOSFET 台产UTC品牌 8N60L特价供应
| 价 格： | 面议 | |
| 型号/规格： | 8N60L | |
| 品牌/商标： | UTC（台湾友顺） | |
| 封装形式： | TO-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
1，我们是UTC（台湾友顺）品牌香港和大陆地区一级代理商。特价销售UTC（台湾友顺）高品质MOS管。
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) =1.2Ω@VGS= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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800V高压场效应管 10N80
信息内容：800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
热销50A/30V贴片MOS管 NCE3050K
信息内容：DESCRIPTIONThe NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =50ARDS(ON) < 9mΩ @ VGS=10VRDS(ON) < 15mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipation● Special process technology for high ESD capability Absolute Maximum Ratings (TA=25℃unless otherwise noted)ParameterSymbolLimitUnitDrain-Source VoltageVDS 30VGate-Source VoltageVGS ±20VDrain Current-ContinuousID 50ADrain Current-Continuous(TC=100℃)ID (100℃)35APulsed Drain CurrentIDM 140AMaximum Power DissipationPD 60WDerating factor0.4W/℃Single pulse avalanche energy (Note 5)EAS70mJOperating Junction and Storage Temperature RangeTJ,TSTG-55 To 175℃
