800V高压场效应管 10N80
| 价 格： | 面议 | |
| 型号/规格： | 10N80 | |
| 品牌/商标： | UTC(台湾友顺） | |
| 封装形式： | TO-3P | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 1.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 45 nC )
* Low reverse transfer capacitance ( CRSS = typical 15 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
- 所属城市：广东 深圳
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- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
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热销50A/30V贴片MOS管 NCE3050K
信息内容：DESCRIPTIONThe NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =50ARDS(ON) < 9mΩ @ VGS=10VRDS(ON) < 15mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipation● Special process technology for high ESD capability Absolute Maximum Ratings (TA=25℃unless otherwise noted)ParameterSymbolLimitUnitDrain-Source VoltageVDS 30VGate-Source VoltageVGS ±20VDrain Current-ContinuousID 50ADrain Current-Continuous(TC=100℃)ID (100℃)35APulsed Drain CurrentIDM 140AMaximum Power DissipationPD 60WDerating factor0.4W/℃Single pulse avalanche energy (Note 5)EAS70mJOperating Junction and Storage Temperature RangeTJ,TSTG-55 To 175℃
现货供场效应管75NF75大功率MOS管75N75
信息内容：1，现货供应UTC（台湾友顺）品牌75N75。 2，全国范围支持支付宝，珠三角支持快递代收款业务。 80Amps, 75Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode power fieldeffect transistors with stable off-state characteristics, fast switchingspeed, low thermal resistance, usually used at telecom andcomputer application.FEATURES* RDS(ON) = 9.5mΩ @VGS = 10 V* Ultra low gate charge ( typical 117 nC )* Fast switching capability* Low reverse transfer Capacitance (CRSS= typical 240 pF )* Avalanche energy Specified* Improved dv/dt capability, high ruggedness
