热销高品质MOS管 NCE75H21
| 价 格： | 面议 | |
| 型号/规格： | NCE75H21 | |
| 品牌/商标： | NCE（新洁能） | |
| 封装形式： | TO-220 | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
DESCRIPTION
The NCE75H21 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● V =75V,I =210A
RDS(ON) < 4m? @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
现货热销高品质MOS管 NCE75H21T
信息内容：DESCRIPTION The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● V=75V,I=210A RDS(ON) < 4m? @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! 100%ΔVds TESTED!
场效应管 MOSFET 台产UTC品牌 8N60L特价供应
信息内容：1，我们是UTC（台湾友顺）品牌香港和大陆地区一级代理商。特价销售UTC（台湾友顺）高品质MOS管。 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC convertersand bridge circuits.FEATURES* RDS(ON) =1.2Ω@VGS= 10 V* Ultra low gate charge ( typical 28 nC )* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
