价 格: | 面议 | |
型号/规格: | MJE13003L | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-126 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特性: | | |
频率特性: | | |
极性: | |
1、台产优质双极型功率三极管。
2、香港交货或大陆含税交货。
NPN SILICON POWER TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
1、TO-251小插件封装。80PCS/管。 2、UTC(台湾友顺)品牌MOS管。 3、现货特价供应。珠三角支持快递代收,全国支持支付宝。 4、0-4个工作日发货。 1.2 Amps, 600/650 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.FEATURES* RDS(ON)=11.5Ω@VGS= 10V.* Ultra Low gate charge (typical 5.0nC)* Low reverse transfer capacitance (CRSS = typical 3.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V