现货特价供UTC 1N60L插件TO251场效应管
| 价 格： | 面议 | |
| 型号/规格： | 1N60L | |
| 品牌/商标： | UTC(台湾友顺） | |
| 封装形式： | TO251 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
1、TO-251小插件封装。80PCS/管。
2、UTC（台湾友顺）品牌MOS管。
3、现货特价供应。珠三角支持快递代收，全国支持支付宝。
4、0-4个工作日发货。
1.2 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
现货供应铁封插件高压MOS管 UTC 2N60L
信息内容：2 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) =5Ω@VGS= 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
210A/30V超大电流MOS管现货供应NCE30H21
信息内容：DESCRIPTIONThe NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V ,ID =210ARDS(ON) < 2.5mΩ @ VGS=10V (Typ:2mΩ)● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipation● Special process technology for high ESD capabilityApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply
