台湾友顺UTC一线代理热销MOS管12N65
| 价 格： | 面议 | |
| 型号/规格： | 12N65 | |
| 品牌/商标： | UTC（台湾友顺） | |
| 封装形式： | TO-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | |
12 Amps, 650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
- 所属城市：广东 深圳
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- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
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现货特价供UTC 1N60L插件TO251场效应管
信息内容：1、TO-251小插件封装。80PCS/管。 2、UTC（台湾友顺）品牌MOS管。 3、现货特价供应。珠三角支持快递代收，全国支持支付宝。 4、0-4个工作日发货。 1.2 Amps, 600/650 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.FEATURES* RDS(ON)=11.5Ω@VGS= 10V.* Ultra Low gate charge (typical 5.0nC)* Low reverse transfer capacitance (CRSS = typical 3.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V
现货供应铁封插件高压MOS管 UTC 2N60L
信息内容：2 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) =5Ω@VGS= 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
