价 格: | 面议 | |
型号/规格: | 30N06 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | 超大功率 |
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
* RDS(ON) =40mΩ@VGS= 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
1、台产优质双极型功率三极管。 2、香港交货或大陆含税交货。 NPN SILICON POWER TRANSISTORS DESCRIPTIONThese devices are designed for high–voltage, high–speedpower switching inductive circuits where fall time is critical. Theyare particularly suited for 115 and 220V SWITCHMODE.FEATURES* Reverse biased SOA with inductive load @ Tc=100°C* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°CTypical tc = 290ns @ 1A, 100°C.* 700V blocking capabilityAPPLICATIONS* Switching regulator’s, inverters* Motor controls* Solenoid/relay drivers* Deflection circuits
12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness