价 格: | 面议 | |
型号/规格: | UTD405 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTD405 can provide excellent RDS(ON), low gate
charge and low gate resistance by using advanced trench
technology. This device is well suited for high current load
applications with the excellent thermal resistance.
FEATURES
* RDS(ON) = 32mΩ @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
30 Amps, 60 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 30N06 is a low voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and excellent avalanchecharacteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient DC to DC convertersand battery operated products.FEATURES* RDS(ON) =40mΩ@VGS= 10 V* Ultra low gate charge ( typical 20 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability
1、台产优质双极型功率三极管。 2、香港交货或大陆含税交货。 NPN SILICON POWER TRANSISTORS DESCRIPTIONThese devices are designed for high–voltage, high–speedpower switching inductive circuits where fall time is critical. Theyare particularly suited for 115 and 220V SWITCHMODE.FEATURES* Reverse biased SOA with inductive load @ Tc=100°C* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°CTypical tc = 290ns @ 1A, 100°C.* 700V blocking capabilityAPPLICATIONS* Switching regulator’s, inverters* Motor controls* Solenoid/relay drivers* Deflection circuits