价 格: | 面议 | |
型号/规格: | UT70N03 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UT70N03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)< 9mΩ @ VGS=10V, ID=33A
* RDS(ON)< 18mΩ @ VGS=4.5V, ID=20A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTD405 can provide excellent RDS(ON), low gatecharge and low gate resistance by using advanced trenchtechnology. This device is well suited for high current loadapplications with the excellent thermal resistance.FEATURES* RDS(ON) = 32mΩ @VGS = -10 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
30 Amps, 60 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 30N06 is a low voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and excellent avalanchecharacteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient DC to DC convertersand battery operated products.FEATURES* RDS(ON) =40mΩ@VGS= 10 V* Ultra low gate charge ( typical 20 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability