价 格: | 面议 | |
型号/规格: | CS1N60 | |
品牌/商标: | CS | |
封装形式: | TO-251 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
1、TO-251小插件封装(如图,参考图片)。3K/盒
2、从华晶定做的足1A电流的1N60,大批量特价现货供应。
3、发货期1个工作日。支持支付宝和珠三角快递代收。
General Description?
CS1N60C3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features?
z Fast Switching
z Low ON Resistance(Rdso小于等于12欧姆)
z Low Gate Charge (Typical Data:6nC)
z Low Reverse transfer capacitances(Typical:2.7pF)
z 100% Single Pulse avalanche energy Test
VDSS 600 V
ID 1.0 A
PD (TC=25?) 30 W
RDS(ONMax. 12
P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT2305 is P-channel enhancement mode PowerMOSFET, designed in serried ranks. With fast switching speed, lowon-resistance, favorable stabilization.Used in commercial and industrial surface mount applicationsand suited for low voltage applications such as DC/DC converters.
1,长备现货,特价热销。 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTIONThe NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =80ARDS(ON) < 6mΩ @ VGS=10VRDS(ON) < 9.5mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipationApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply