现货热销高品质80A/30V贴片MOS管NCE3080K
| 价 格： | 面议 | |
| 型号/规格： | NCE3080K | |
| 品牌/商标： | NCE（新洁能） | |
| 封装形式： | TO-263 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 卷带编带包装 | |
| 功率特征： | |
1,长备现货，特价热销。
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =80A
RDS(ON) < 6mΩ @ VGS=10V
RDS(ON) < 9.5mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 于晶
- 电话：0755-29743120
- 传真：0755-29743152-808
- 手机：13802706767
- QQ ：
台湾友顺UTC 场效应管 贴片UF830 TO-252
信息内容：4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFET isdesigned for high voltage, high speed power switching applications such asswitching regulators, switching converters, solenoid, motor drivers, relaydrivers.FEATURES* 4.5A, 500V, RDS(ON)=1.5Ω* Single Pulse Avalanche Energy Rated* Rugged- SOA is Power Dissipation Limited* Fast Switching Speeds* Linear Transfer Characteristics* High Input Impedance
厂家专供10毫欧级高品质30V/10A贴片MOS管 NCE3010S
信息内容：1,完美替代仙童、IR、AOS同参数产品，超低导通阻抗。 2,常备大量现货，特价热销，可立即发货。 3,可免费索样，支持支付宝交易，并承担产品质量因起的损失！ DESCRIPTIONThe NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =10ARDS(ON) < 13.5mΩ @ VGS=10VRDS(ON) < 20mΩ @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply
