价 格: | 面议 | |
型号/规格: | UT2305 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | SOT-23 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UT2305 is P-channel enhancement mode Power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
1,长备现货,特价热销。 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTIONThe NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =80ARDS(ON) < 6mΩ @ VGS=10VRDS(ON) < 9.5mΩ @ VGS=5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and current● Good stability and uniformity with high EAS● Excellent package for good heat dissipationApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFET isdesigned for high voltage, high speed power switching applications such asswitching regulators, switching converters, solenoid, motor drivers, relaydrivers.FEATURES* 4.5A, 500V, RDS(ON)=1.5Ω* Single Pulse Avalanche Energy Rated* Rugged- SOA is Power Dissipation Limited* Fast Switching Speeds* Linear Transfer Characteristics* High Input Impedance