带阻尼数字三极管 DTC115T
| 价 格： | 面议 |
品牌:UTC(台湾友顺） 型号:DTC115T 应用范围:带阻尼 封装形式:SOT-23
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors.
* The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input They also have the
advantage of almost completely eliminating parasitic effects.
* Only the on / off conditions need to be set for operation, making
device design easy.
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国产高品质华晶MOS管CS10N60
信息内容：品牌:华晶 型号:CS10N60 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道国产华晶品牌MOS，现货供应。10 Amps, 600Volts N-CHANNEL POWER MOSFET DESCRIPTIONThe CS10N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and have ahigh rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in power supplies,PWM motor controls, high efficient DC to DC converters and bridgecircuits. FEATURES* 10A, 600V, RDS(ON)=0.73Ω@VGS=10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capability
现货供场效应MOS管 IRF730 TSP730
信息内容：品牌:Truesemi 型号:TSP730M 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道1、韩系高品质场效应管。TO-220铁头封装，1K/盒。 2、现货特价供应稳定。 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.FEATURES* RDS(ON) =1Ω@VGS= 10 V* Avalanche energy specified* Rugged - SOA is power dissipation limited* Fast switching capability* Linear transfer characteristics* High input impedance
