品牌:华晶 型号:CS10N60 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道
国产华晶品牌MOS,现货供应。
10 Amps, 600Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The CS10N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* 10A, 600V, RDS(ON)=0.73Ω@VGS=10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
品牌:Truesemi 型号:TSP730M 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道1、韩系高品质场效应管。TO-220铁头封装,1K/盒。 2、现货特价供应稳定。 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.FEATURES* RDS(ON) =1Ω@VGS= 10 V* Avalanche energy specified* Rugged - SOA is power dissipation limited* Fast switching capability* Linear transfer characteristics* High input impedance
品牌/商标 台产 型号/规格 HS70N06PA 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 增强型 材料 N-FET硅N沟道 1,70 Amps,60 Volts N-CHANNEL POWER MOSFET。2,现货特价供货稳定,性价比高,适合于国产中高端设备。3,实际价格请垂询我们的业务人员 1.DescriptionThe HS70N06 is three-terminal silicon device with current conduction capability of about70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max thresholdvoltages of 4 volt. It is mainly suitable electronic ballast, and low power switching2. Features RDS(ON)=15mΩ@VGS=10V. Ultra low gate charge (typical 90nC) Low reverse transfer capacitance Fast switching capability 100% avalanche energy specified Improved dv/dt capability