现货供场效应MOS管 IRF730 TSP730
| 价 格： | 49.00 |
品牌:Truesemi 型号:TSP730M 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道
1、韩系高品质场效应管。TO-220铁头封装，1K/盒。
2、现货特价供应稳定。
5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) =1Ω@VGS= 10 V
* Avalanche energy specified
* Rugged - SOA is power dissipation limited
* Fast switching capability
* Linear transfer characteristics
* High input impedance
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现货70A/60V 低压MOS管 70N06
信息内容：品牌/商标 台产 型号/规格 HS70N06PA 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 增强型 材料 N-FET硅N沟道 1，70 Amps,60 Volts N-CHANNEL POWER MOSFET。2，现货特价供货稳定，性价比高，适合于国产中高端设备。3,实际价格请垂询我们的业务人员 1.DescriptionThe HS70N06 is three-terminal silicon device with current conduction capability of about70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max thresholdvoltages of 4 volt. It is mainly suitable electronic ballast, and low power switching2. Features RDS(ON)=15mΩ@VGS=10V. Ultra low gate charge (typical 90nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability
800V高压场效应管 10N80
信息内容：品牌:UTC(台湾友顺） 型号:10N80 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:耗尽型800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
