ALC前置放大器UTC BA3308
| 价 格： | 面议 |
品牌:UTC（台湾友顺） 型号:BA3308 批号:09 封装:SIP-9,SOP-14 营销方式:现货 产品性质:热销 类型:放大器
DUAL PREAMPLIFIER WITH ALC
DESCRIPTION
The UTC BA3308 is designed to have dual preamplifier
ICs with built – in ALC circuits for use in stereo amplification.
The preamplifiers have high gain and low distortion. A built-in
rectifier for ALC circuit implies good channel balance and
large dynamic range can be constructed with addition of just
an external time constant circuit.
FEATURES
* Wide operating power supply voltage range
(VCC =6.0V ~ 14V)
* Power-on mute circuit to avoid “pop” noise generation.
* No input coupling capacitors are necessary
* High gain (GVO=80dB)and low noise (VNIN=1μVrms)
* Low distortion (THD=0.1%)
* Good ALC channel balance with built-in ALC rectifier diode
* Adjustable ALC dynamic range by external input resistor.
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 宋哲
- 电话：755-29743120
- 传真：755-29743120
- 手机：
- QQ ：
现货特价供高压MOS管 UF830 IRF830
信息内容：品牌:UTC(台湾友顺） 型号:UF830 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:耗尽型 耗散功率:73000（mW）1，UTC品牌台产高品质MOS管，适用于汽车逆变器，HID灯等高要求场合。 2，现货稳定供应，替代IRF830的理想选择。 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate powerMOSFET is designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.FEATURES* 4.5A, 500V, RDS(ON)=1.5Ω* Single Pulse Avalanche Energy Rated* Rugged- SOA is Power Dissipation Limited* Fast Switching Speeds* Linear Transfer Characteristics* High Input Impedance
现货特价供UTC 1N60AL MOS管 场效应管
信息内容：品牌:UTC(台湾友顺） 型号:1N60AL 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道 极间电容:3（pF）1、TO-92小插件封装。！1K/袋。 2、UTC（台湾友顺）品牌MOSFET。 3、发货期1-4个工作日。支持支付宝和珠三角快递代收。 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTIONThe UTC 1N60A is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits. FEATURES* RDS(ON)=15Ω@VGS= 10V.* Ultra Low gate charge (typical 8.0nC)* Low reverse transfer capacitance (CRSS = 3.0 pF(max))* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
