现货特价供高压MOS管 UF830 IRF830
| 价 格： | 25000.00 |
品牌:UTC(台湾友顺） 型号:UF830 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:耗尽型 耗散功率:73000（mW）
1，UTC品牌台产高品质MOS管，适用于汽车逆变器，HID灯等高要求场合。
2，现货稳定供应，替代IRF830的理想选择。
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATURES
* 4.5A, 500V, RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
- 所属城市：广东 深圳
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- 联系人： 宋哲
- 电话：755-29743120
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现货特价供UTC 1N60AL MOS管 场效应管
信息内容：品牌:UTC(台湾友顺） 型号:1N60AL 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道 极间电容:3（pF）1、TO-92小插件封装。！1K/袋。 2、UTC（台湾友顺）品牌MOSFET。 3、发货期1-4个工作日。支持支付宝和珠三角快递代收。 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTIONThe UTC 1N60A is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits. FEATURES* RDS(ON)=15Ω@VGS= 10V.* Ultra Low gate charge (typical 8.0nC)* Low reverse transfer capacitance (CRSS = 3.0 pF(max))* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
4.2A/20V之P沟道MOS管 UTC
信息内容：品牌/商标 UTC(台湾友顺） 型号/规格 UT2305 种类 绝缘栅(MOSFET) 沟道类型 P沟道 导电方式 耗尽型 封装外形 SMD(SO)/表面封装 材料 P-FET硅P沟道 开启电压 -1.2（V） 跨导 3.6（μS） 极间电容 0.74（pF） 漏极电流 -4.2（mA） 耗散功率 1.38（mW） P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT2305 is P-channel enhancement mode PowerMOSFET, designed in serried ranks. With fast switching speed, lowon-resistance, favorable stabilization.Used in commercial and industrial surface mount applicationsand suited for low voltage applications such as DC/DC converters.
