现货特价供UTC 1N60AL MOS管 场效应管
| 价 格： | 280.00 |
品牌:UTC(台湾友顺） 型号:1N60AL 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道 极间电容:3（pF）
1、TO-92小插件封装。！1K/袋。
2、UTC（台湾友顺）品牌MOSFET。
3、发货期1-4个工作日。支持支付宝和珠三角快递代收。
0.5 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=15Ω@VGS= 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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4.2A/20V之P沟道MOS管 UTC
信息内容：品牌/商标 UTC(台湾友顺） 型号/规格 UT2305 种类 绝缘栅(MOSFET) 沟道类型 P沟道 导电方式 耗尽型 封装外形 SMD(SO)/表面封装 材料 P-FET硅P沟道 开启电压 -1.2（V） 跨导 3.6（μS） 极间电容 0.74（pF） 漏极电流 -4.2（mA） 耗散功率 1.38（mW） P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT2305 is P-channel enhancement mode PowerMOSFET, designed in serried ranks. With fast switching speed, lowon-resistance, favorable stabilization.Used in commercial and industrial surface mount applicationsand suited for low voltage applications such as DC/DC converters.
带阻尼数字三极管 DTC115T
信息内容：品牌:UTC(台湾友顺） 型号:DTC115T 应用范围:带阻尼 封装形式:SOT-23NPN DIGITAL TRANSISTOR(BUILT-IN RESISTORS) FEATURES* Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors.* The bias resistors consist of thin-film resistors with completeisolation to allow positive biasing of the input They also have theadvantage of almost completely eliminating parasitic effects.* Only the on / off conditions need to be set for operation, makingdevice design easy.
