IBSG中红外发光二极管LED23
| 价 格： | 5.00 |
品牌:IBSG 型号:LED23 种类:光学发射器件 波段范围:中红外 运转方式:可调谐式 激励方式:电激励式 工作物质:半导体 光路径:反射型外光路 输出形式:功率型 传输信号:单电源型 速度:高速 通道:单通道 输出波长:2300（nm） 线宽:1（mm）
中红外超级LED23系列
波长2.3 - 2.39um
开关时间 30ns
使用温度-240度至50度
TO-18封装
dzsc/18/2182/18218275.jpg
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
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