IBSG中红外发光二极管LED39
| 价 格： | 5.00 |
品牌:IBSG 型号:LED39-XX 种类:光学发射器件 波段范围:中红外 运转方式:重复脉冲式 激励方式:电激励式 工作物质:半导体 光路径:反射型外光路 输出形式:功率型 传输信号:单电源型 速度:高速 通道:单通道 输出波长:3900（nm） 线宽:1（mm）
中红外超级LED39系列
dzsc/18/2182/18218276.jpg
波长3.8- 4.0um
开关时间 30ns
使用温度-240度至50度
TO-18封装
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
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IBSG中红外发光二极管LED37
信息内容：品牌:IBSG 型号:LED37-XX 种类:光学发射器件 波段范围:中红外 运转方式:可调谐式 激励方式:电激励式 工作物质:半导体 光路径:反射型外光路 输出形式:功率型 传输信号:单电源型 速度:高速 通道:单通道 输出波长:1600-5000（nm） 线宽:1（mm）中红外超级LED37系列dzsc/18/2286/18228632.jpg波长3.70 - 3.85um开关时间 30ns使用温度-240度至50度TO-18封装 Light Emitting Diodes with centralwavelength 3,75 mm series are based onheterostructures grown on InAs substratesby MOCVD. InAsSb is used in the activelayer. Wide band gap solid solutionsInAsSbP with P content 50% are used forgood electron confinement.Light Emitting Diodes with centralwavelength 3,75 mm series are based onheterostructures grown on InAs substratesby MOCVD. InAsSb is used in the activelayer. Wide band gap solid solutionsInAsSbP with P content 50% are used forgood electron confinement.Light Emitting Diodes with centralwavelength 3,75 mm series are based onheterostructures grown on InAs substratesby MOCVD. InAsSb is used in the activelayer. Wide ba...
