价 格: | 面议 | |
型号/规格: | 2SA1358/2SC3421 | |
品牌/商标: | TOSHIBA NXP | |
封装形式: | TO-126 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 散装 | |
功率特性: | | |
频率特性: | | |
极性: | |
属性 | 值 | 条件 |
部件型号 | 2SA1358 | |
极性 | PNP | |
互补产品 | 2SC3421 | |
集电极-发射极电压VCEO | -120 V | |
集电极电流(DC) IC(DC) | -1 A | |
PC(w) @Tc=25°C, max | 10 W | |
封装 | TO-126 | |
管脚数 | 3 | |
表面安装型 | N | |
载带信息 | 图样黏贴不可用 | |
用途 | 驱动器 | |
产品分类 | 高频开关功率晶体管 | |
RoHS Compatible Product(s) (#) | Available |
Product Detail InformaTION Product Group Resistor Chips Ordering Code RC0402JR-0720KL Ordering Code 232270570203L Unified CTC RC0402JR-0720KL Additional Product Code 9C04021A2002JLPF3 Description General Purpose 0402 20 kOhm +-5% Paper 178mm (7") Leadfree STatus Preferred
BSS138N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionThese N-Channel enhancement mode field effecttransistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These productshave been designed to minimize on-state resistancewhile provide rugged, reliable, and fast switchingperformance.These products are particularly suited forlow voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, andother switching applications.Features• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 VRDS(ON) = 6.0Ω @ VGS = 4.5 V• High density cell design for extremely low RDS(ON)• Rugged and Reliable• Compact industry standard SOT-23 surface mountpackage 自动翻译: BSS138 N-Channel逻辑水平的提高模式场效应晶体管 总体描述 这些N-Channel增强模式磁场效应 晶体管是使用了费雅嘉专有的, 细胞密度、DMOS高技术。这些产品 被设计用来减少导通状态的抵抗 在提供坚固耐用,可靠,快速切...