价 格: | 面议 | |
型号/规格: | BSS138,印记:J1 | |
品牌/商标: | JRC | |
封装形式: | SOT-23-3 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
Features
• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package
自动翻译:
BSS138
N-Channel逻辑水平的提高模式场效应晶体管
总体描述
这些N-Channel增强模式磁场效应
晶体管是使用了费雅嘉专有的,
细胞密度、DMOS高技术。这些产品
被设计用来减少导通状态的抵抗
在提供坚固耐用,可靠,快速切换
性能。这些产品特别适合
低电压、低电流的应用,如小
伺服电机驱动控制、功率MOSFET门,
0603 0805 1206 1210 2225
供应60V,20A肖特基二极管VF20100C 供应60V,15A肖特基二极管W2156,FMW-2156 Dual High-Voltage Trench MOS Barrier Schottky RectifierUltra Low VF = 0.50 V at IF = 5 AFEATURES• Trench MOS Schottky technology• Low forward voltage drop, low powerlosses• high efficiency operATIon• Meets MSL level 1, per J-STD-020, LF maximumpeak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220ABand TO-262AA package)• Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency inverters, switching powersupplies, freewheeling diodes, OR-ing diode, dc-to-dcconverters and reverse battery protection.