供应45V,1.5A.350MW NPN SOT-23三极管BC817-40
| 价 格： | 面议 | |
| 型号/规格： | BC817-40，印记：6C | |
| 品牌/商标： | NXP | |
| 封装形式： | SOT-23 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 卷带编带包装 | |
| 功率特性： | | |
| 频率特性： | | |
| 极性： | |
供应45V,1.5A.350MW NPN SOT-23三极管BC817-40
45 V, 500 mA NPN general-purpose transistors
Type number Marking
BC817 6D*
BC817-16 6A*
BC817-25 6B*
BC817-40 6C*
BC817W 6D*
BC817-16W 6A*
BC817-25W 6B*
BC817-40W 6C*
BC337 C337
BC337-16 C33716
BC337-25 C33725
BC337-40 C33740
- 所属城市：广东 深圳
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- 联系人： 陈树辉
- 电话：0755-82534577/13076512089
- 传真：0755-82534577
- 手机：13686868407
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供应600V,12A N-CH东芝场效应晶体管MOS型K2699
信息内容：TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor DriveApplications Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
供应40V,32A,P-Ch功率场效应MOS管FDD4685
信息内容：供应40V,32A,P-Ch增强型场效应MOS管FDD4685 FDD468540V P-Channel PowerTrench® MOSFET–40V, –32A, 27mΩFeaturesMax rDS(on) = 27mΩ at VGS = –10V, ID = –8.4AMax rDS(on) = 35mΩ at VGS = –4.5V, ID = –7AHigh performance trench technology for extremely low rDS(on)RoHS CompliantGeneral DescriptionThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.ApplicationInverterPower Supplies
