价 格: | 面议 | |
型号/规格: | TPCA8055-H | |
品牌/商标: | TOSHIBA(东芝) | |
封装形式: | PSOP-8 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 3000/盘 |
TPCA8056-H,QFN-8 5*6/PSOP-8,SMD/MOS,N场,30V,48A,0.0022Ω
应用:
* 高效率DC-DC转换器
* 笔记本电脑
* 移动手机
特点:
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate change: QSW = 17 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
产品型号:TPCA8056-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
封装:QFN-8 5*6/PSOP-8
品牌:TOSHIBA/东芝
源漏极间雪崩电压V(br)dss(V):30
夹断电压VGS(V):±20
漏极电流Id(A):48
源漏极导通电阻rDS(on)(Ω):0.0022 @VGS = 10 V
开启电压VGS(TH)(V):2.3
功率PD(W):63
输入电容Ciss(PF):5200 typ.
通道极性:N沟道
低频跨导gFS(s):
单脉冲雪崩能量EAS(mJ):299
导通延迟时间Td(on)(ns):14 typ.
上升时间Tr(ns):4.7 typ.
关断延迟时间Td(off)(ns):59 typ.
下降时间Tf(ns):7.5 typ.
温度(℃): -55 ~150
描述:TPCA8056-H,30V,48A,0.0022Ω N-沟道增强型场效应晶体管
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