价 格: | 面议 | |
型号/规格: | TPCC8103 | |
品牌/商标: | TOSHIBA(东芝) | |
封装形式: | QFN-8 3.3*3.3 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 3000/盘 |
场效应管专家!新到TOSHIBA/东芝贴片8脚(SOP-8、QFN-8 5*6/PSOP-8、TSSOP-8)系列MOS,广泛应用于航模电调,电脑主板显卡,笔记本电脑,移动手机,DC-DC转换器,电机驱动,开关稳压器等领域! 全新原装,现货供应! 更多型号贴片8脚型号请来电或QQ联系!
型号 | 品牌 | 封装 | 类型 | 极性 | 电压 | 电流 |
TPC8020-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 13A |
TPC8028 | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 18A |
TPC8032-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 15A |
TPC8035-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 18A |
TPC8037-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 12A |
TPC8059-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 18A |
TPC8062-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 18A |
TPC8085 | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 18A |
TPC8114 | TOSHIBA | SOP-8 | SMD/MOS | P场 | -30V | -18A |
TPC8123 | TOSHIBA | SOP-8 | SMD/MOS | P场 | -30V | -11A |
TPC8127 | TOSHIBA | SOP-8 | SMD/MOS | P场 | -30V | -13A |
TPC8213-H | TOSHIBA | SOP-8 | SMD/MOS | 双N | 60/60V | 5/5A |
TPC8218-H | TOSHIBA | SOP-8 | SMD/MOS | 双N | 60/60V | 3.8/3.8A |
TPC8A02-H | TOSHIBA | SOP-8 | SMD/MOS | N场 | 30V | 16A |
TPCA8003-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 35A |
TPCA8005-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 27A |
TPCA8012-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 40A |
TPCA8018-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 30A |
TPCA8024 | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 35A |
TPCA8025 | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 40A |
TPCA8028-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 50A |
TPCA8030-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 24A |
TPCA8040-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 23A |
TPCA8045-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 40V | 46A |
TPCA8050-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 60V | 24A |
TPCA8053-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 60V | 15A |
TPCA8055-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 56A |
TPCA8056-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 48A |
TPCA8057-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 42A |
TPCA8058-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 38A |
TPCA8060-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 45A |
TPCA8087 | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 56A |
TPCA8109 | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | P场 | -30V | -24A |
TPCA8120 | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | P场 | -30V | -45A |
TPCA8A02-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 34A |
TPCA8A05-H | TOSHIBA | QFN-8 5*6/PSOP-8 | SMD/MOS | N场 | 30V | 20A |
TPCC8076 | TOSHIBA | QFN-8 3.3*3.3 | SMD/MOS | N场 | 33V | 27A |
TPCC8103 | TOSHIBA | QFN-8 3.3*3.3 | SMD/MOS | P场 | -30V | -18A |
TPCC8104 | TOSHIBA | QFN-8 3.3*3.3 | SMD/MOS | P场 | -30V | -20A |
TPCS8210 | TOSHIBA | TSSOP-8 | SMD/MOS | 双N | 20V/20V | 5A/5A |
TPCS8211 | TOSHIBA | TSSOP-8 | SMD/MOS | 双N | 20V/20V | 6A/6A |
TPCS8302 | TOSHIBA | TSSOP-8 | SMD/MOS | 双P | -20V/-20V | -5A/-5A |
TPCS8303 | TOSHIBA | TSSOP-8 | SMD/MOS | 双P | -20V/-20V | -5A/-5A |
TPCA8056-H,QFN-8 5*6/PSOP-8,SMD/MOS,N场,30V,48A,0.0022Ω 应用: * 高效率DC-DC转换器 * 笔记本电脑 * 移动手机 特点: (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 17 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 产品型号:TPCA8056-H MOSFETs Silicon N-Channel MOS (U-MOS-H) 封装:QFN-8 5*6/PSOP-8 品牌:TOSHIBA/东芝 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 漏极电流Id(A):48 源漏极导通电阻rDS(on)(Ω):0.0022 @VGS = 10 V 开启电压VGS(TH)(V):2.3 功率PD(W):63 输入电容Ciss(PF):5200 typ. 通道极性:N沟道 低频跨导gFS(s): 单脉冲雪崩能量EAS(mJ):299 导通延迟时间Td(on)(ns):14 typ. 上升时间Tr(ns):4.7 typ. 关断延迟时间Td(off)(ns):59 typ. 下降时间Tf(ns)...
产品型号:TPCA8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) 应用: 高效率DC / DC转换器应用 笔记型电脑PC应用程序 便携式设备的应用 特点: * Small footprint due to a small and thin package * High speed switching * Small gate charge: QSW =7.7 nC (typ.) * Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) * High forward transfer admittance: |Yfs| =46 S (typ.) * Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) * Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 封装:QFN-8 5*6/PSOP-8 品牌:TOSHIBA/东芝 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 漏极电流Id(A):27 源漏极导通电阻rDS(on)(Ω):0.009 @VGS = 10 V 开启电压VGS(TH)(V):2.3 功率PD(W):45 输入电容Ciss(PF):1395 typ. 通道极性:N沟道 低频跨导gFS(s):46 单脉冲雪崩能量EAS(mJ):95 导通延迟时间Td(on)(ns):9 typ. 上升时间Tr(ns):3 typ. 关断延迟时间Td(off)(n...