供应场效应管CS4N65FA9HD
| 价 格： | 1.00 | |
| 型号/规格： | CS4N65FA9HD | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：电源适配器，隔离式的LED驱动，LCD电源
Silicon N-Channel Power MOSFET
CS4N65FA9HD
General Description：
VDSS
650
V
ID
4
A
PD(TC=25℃)
24
W
RDS(ON)
2.5
Ω
CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data: 18nC)
Low Reverse transfer capacitances(Typical: 15pF)
100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管CS12N60A8HD
信息内容：主要应用领域：电动车充电器 Silicon N-Channel Power MOSFET CS12N60A8HD General Description： CS12N60A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching ESD Improved Capability Low Gate Charge (Typical Data:58nC) Low Reverse transfer capacitances(Typical:90pF) 100% Single Pulse avalanche energy Test
供应场效应管CS8N60A8H
信息内容：主要应用领域：电动车充电器，LED灯，安定器 Silicon N-Channel Power MOSFET CS8N60A8H General Description： VDSS 600 V ID 8 A PD(TC=25℃) 110 W RDS(ON) 0.90 Ω CS8N60A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤1.25Ω) Low Gate Charge (Typical Data:21nC) Low Reverse transfer capacitances(Typical:15pF) 100% Single Pulse avalanche energy Test
