供应场效应管CS12N60A8HD
| 价 格： | 1.00 | |
| 型号/规格： | CS12N60A8HD | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：电动车充电器
Silicon N-Channel Power MOSFET
CS12N60A8HD
General Description：
CS12N60A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:58nC)
Low Reverse transfer capacitances(Typical:90pF)
100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
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- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
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供应场效应管CS8N60A8H
信息内容：主要应用领域：电动车充电器，LED灯，安定器 Silicon N-Channel Power MOSFET CS8N60A8H General Description： VDSS 600 V ID 8 A PD(TC=25℃) 110 W RDS(ON) 0.90 Ω CS8N60A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤1.25Ω) Low Gate Charge (Typical Data:21nC) Low Reverse transfer capacitances(Typical:15pF) 100% Single Pulse avalanche energy Test
供应场效应管CS4N65A8HD
信息内容：主要应用领域：小功率充电器，PC电源辅助电源 Silicon N-Channel Power MOSFET CS1N60A3H General Description： CS1N60A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤15Ω) Low Gate Charge (Typical Data:5.0nC) Low Reverse transfer capacitances(Typical:2.7pF) 100% Single Pulse avalanche energy Test
