供应场效应管IRF640NPBF
| 价 格： | 1.00 | |
| 型号/规格： | IRF640NPBF | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：低压电子镇流器，电视剧枕校
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Description
Fifth Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance
in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofileapplication.
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
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供应场效应管CS4N65FA9HD
信息内容：主要应用领域：电源适配器，隔离式的LED驱动，LCD电源 Silicon N-Channel Power MOSFET CS4N65FA9HD General Description： VDSS 650 V ID 4 A PD(TC=25℃) 24 W RDS(ON) 2.5 Ω CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 18nC) Low Reverse transfer capacitances(Typical: 15pF) 100% Single Pulse avalanche energy Test
