供应场效应管CS1N60A3
| 价 格： | 1.00 | |
| 型号/规格： | CS1N60A3 | |
| 品牌/商标： | 华晶 | |
| 封装形式： | TO-220 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | 中功率 |
主要应用领域：小功率充电器
Silicon N-Channel Power MOSFET
CS1N60A3H
General Description：
CS1N60A3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤15Ω)
Low Gate Charge (Typical Data:5.0nC)
Low Reverse transfer capacitances(Typical:2.7pF)
100% Single Pulse avalanche energy Test
- 所属城市：上海 上海市
- [联系时请说明来自维库仪器仪表网]
- 联系人： 田先生\刘小姐
- 电话：021-38046966
- 传真：021-38840019
- 手机：18964366969
- QQ ：
供应场效应管CS2N60A3H
信息内容：主要应用于电源，充电器，整流器，节能灯，LED灯等. Silicon N-Channel Power MOSFET CS2N60A3H General Description： CS2N60A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features： Fast Switching Low ON Resistance(Rdson≤4.5Ω) Low Gate Charge (Typical Data:8nC) Low Reverse transfer capacitances(Typical:3.8pF) 100% Single Pulse avalanche energy Test
供应场效应管CS840FA9H
信息内容：Silicon N-Channel Power MOSFET CS8N90FA9 General Description： CS8N90FA9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： Fast Switching Low ON Resistance(Rdson≤1.35Ω) Low Gate Charge (Typical Data:49nC) Low Reverse transfer capacitances(Typical:12pF) 100% Single Pulse avalanche energy Test VDSS 900 V ID 8 A PD (TC=25℃) 57 W RDS(ON)Typ 1.2 Ω
