Silicon N-Channel Power MOSFET
CS4145A8H
General Description
CS4145A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220,
which accords with the RoHS standard.
Features
竛 Fast Switching
竛 Low ON Resistance
竛 Low Gate Charge (Typical Data:82nC)
竛 Low Reverse transfer capacitances(Typical:260pF)主要应用领域:低压电子镇流器,电视机枕校 Silicon N-Channel Power MOSFET CS630FA9H General Description CS630FA9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features 竛 Fast Switching 竛 Low ON Resistance 竛 Low Gate Charge (Typical Data:13nC) 竛 Low Reverse transfer capacitances(Typical:10pF) 竛 100% Single Pulse avalanche energy Test
主要应用领域:小功率充电器 Silicon N-Channel Power MOSFET CS1N60A3H General Description: CS1N60A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson≤15Ω) Low Gate Charge (Typical Data:5.0nC) Low Reverse transfer capacitances(Typical:2.7pF) 100% Single Pulse avalanche energy Test