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MOSFET的参数介绍
Parameter |
Symbol |
Limit |
Unit |
Drain-Source Voltage |
VDS |
-55 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Drain Current-Continuous |
ID |
-30 |
A |
Drain Current-Continuous(TC=100℃) |
ID (100℃) |
-21 |
A |
Pulsed Drain Current |
IDM |
110 |
A |
Maximum Power Dissipation |
PD |
90 |
W |
Derating factor |
|
0.72 |
W/℃ |
Single pulse avalanche energy (Note 5) |
EAS |
420 |
mJ |
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
Off Characteristics |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V ID=-250μA |
-55 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=-55V,VGS=0V |
- |
- |
1 |
μA |
Gate-Body Leakage Current |
IGSS |
VGS=±20V,VDS=0V |
- |
- |
±100 |
nA |
On Characteristics (Note 3) |
||||||
Gate Threshold Voltage |
VGS(th) |
VDS=VGS,ID=-250μA |
-2 |
-3 |
-4 |
V |
Drain-Source On-State Resistance |
RDS(ON) |
VGS=-10V, ID=-15A |
- |
30 |
40 |
mΩ |
Forward Transconductance |
gFS |
VDS=-25V,ID=-16A |
8 |
- |
- |
S |
Dynamic Characteristics (Note4) |
MOSFET在概念上属于"绝缘栅极场效晶体管"(Insulated-Gate Field Effect Transistor,IGFET),而IGFET的栅极绝缘层有可能是其他物质而非MOSFET使用的氧化层。有些人在提到拥有多晶硅栅极的场效晶体管元件时比较喜欢用IGFET,但是这些IGFET多半指的是MOSFET.
乾野电子是中国研发成功并上量销售650V 超结-MOSFET(SJ-MOSFET)的设计公司,目标成为客户全球价值的功率半导体器件与服务供应商。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current ...
乾野电子的产品注重发展大功率器件、功率模块和集成器件、压电陀螺仪;性能与可靠性超越同行;应用偏向高端;注重品牌和信誉。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current ...