价 格: | 面议 | |
品牌/商标: | NEC/日本电气 | |
型号/规格: | 2SC3357 | |
应用范围: | 功率 | |
功率特性: | 小功率 | |
频率特性: | 高频 | |
极性: | NPN型 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | 贴片型 | |
封装材料: | 塑料封装 | |
集电极允许电流ICM: | 0.1(A) | |
集电极耗散功率PCM: | 1.2(W) | |
营销方式: | 现货 | |
产品性质: | 热销 |
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
长期有货,欢迎来电咨询!
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage: BD433: BD435: BD437223245VVVVCES Collector-Emitter Voltage: BD433: BD435: BD437223245VVVVCEO Collector-Emitter Voltage: BD433: BD435: BD437223245VVVVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 4 AICP *Collector Current (Pulse) 7 AIB Base Current 1 APC Collector Dissipation (TC=25°C) 36 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 65 ~ 150 °CMedium Power Linear and SwitchingApplications• Complement to BD434, BD436 and BD438 respectively
D965 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 0.75 W(Tamb=25℃) Collector current ICM : 5 A Collector-base voltage V(BR)CBO :42 V Operating and storage junction temperature range TJ,Tstg: -55℃ to 150℃ D965 2SD965 S9011G S9012H MMBT9012 (2T1) S9013H MMBT9013 L9013RLT1G MMBT9013 S9014C S9015C MMBT9014 (J6) 2SC1623 L6 2SC1623 (L7) 2SC1623 L6 MMBT9015 (M6) S9018H MMBT9018 S8050D S8550D MMBT8050(J3Y) 8550D S8550 SS8050D 1.5A SS8550D 1.5A MMBTSS8050(1.5A) Y1 MMBTSS8550(1.5A) Y2 SS8050D1.5A C中 SS8550D1.5A C中 MPSA06 M28S M28S 2N2222 2N2907 MMBT2222(1P) MMBT2907(2F) PMBT2907A(W2F) TN2222A TN2907