价 格: | 面议 | |
品牌/商标: | 国产 | |
型号/规格: | BD435 | |
应用范围: | 功率 | |
功率特性: | 中功率 | |
频率特性: | 低频 | |
极性: | NPN型 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 | |
截止频率fT: | 3(MHz) | |
集电极允许电流ICM: | 4(A) | |
集电极耗散功率PCM: | 36(W) | |
营销方式: | 现货 |
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VCES Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VCEO Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
D965 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 0.75 W(Tamb=25℃) Collector current ICM : 5 A Collector-base voltage V(BR)CBO :42 V Operating and storage junction temperature range TJ,Tstg: -55℃ to 150℃ D965 2SD965 S9011G S9012H MMBT9012 (2T1) S9013H MMBT9013 L9013RLT1G MMBT9013 S9014C S9015C MMBT9014 (J6) 2SC1623 L6 2SC1623 (L7) 2SC1623 L6 MMBT9015 (M6) S9018H MMBT9018 S8050D S8550D MMBT8050(J3Y) 8550D S8550 SS8050D 1.5A SS8550D 1.5A MMBTSS8050(1.5A) Y1 MMBTSS8550(1.5A) Y2 SS8050D1.5A C中 SS8550D1.5A C中 MPSA06 M28S M28S 2N2222 2N2907 MMBT2222(1P) MMBT2907(2F) PMBT2907A(W2F) TN2222A TN2907
BD439(3DA439) 硅NPN 半导体三极管/SILICON NPN TRANSISTOR用途:用于中功率电路及开关电路。Purpose: Medium power linear and switching applications.特点:与BD440(3CA440)互补。Features: Complementary pair with BD440(3CA440).极限参数/Absolute Maximum Ratings(Ta=25℃)参数符号Symbol数值Rating单位UnitVCBO 60 VVCES 60 VVCEO 60 VVEBO 5.0 VIC 4.0 AICP 7.0 AIB 1.0 APC(Tc=25℃) 36 WTj 150 ℃Tstg -55~150 ℃电性能参数/Electrical Characteristics(Ta=25℃)