参数 |
符号 |
值 |
单位 |
输入电压 |
VIN |
-0.3 to +10 |
V |
结温 |
TJ |
-40 to +85 |
°C |
符号 |
参数 |
条件 |
最小 |
典型 |
|
单位 |
VCC |
输入电压 |
4.25 |
6 |
V |
||
ICC |
输入支持电流 |
充电模式, RPROG= 10K |
190 |
µA |
||
待机模式(充电完成) |
85 |
µA |
||||
关断模式(RPROG 不接,VCC< VBAT, or VCC< VUV) |
12 |
µA |
||||
VFLOAT |
整流输出电压 |
0°C ≤ TJ ≤ 85°C, IBAT= 40mA |
4.2 |
V |
||
IBAT |
BAT 脚电流 |
RPROG= 10K, 充电模式 |
110 |
mA |
||
RPROG= 2K, 充电模式 |
500 |
mA |
||||
待机模式,VBAT= 4.2V |
4 |
µA |
||||
关断模式(RPROG 不接) |
±1 |
µA |
||||
睡眠模式,VCC= 0V |
±1 |
µA |
||||
ITRIKL |
涓流充电电流 |
VBAT< VTRIKL, RPROG= 10K |
12 |
mA |
||
VTRIKL |
涓流隔值电压 |
RPROG= 10K, VBAT 上升 |
2.9 |
V |
符号 |
参数 |
条件 |
最小 |
典型 |
|
单位 |
VUV |
电源低压关断隔值 |
电源从低到高时 |
3.4 |
V |
||
VUVHYS |
电源低压关断滞后电压 |
170 |
mV |
|||
VMSD |
手动关断隔值电压 |
PROG脚电压上升时 |
1.25 |
V |
||
PROG 脚电压下降时 |
1.2 |
V |
||||
VASD |
VCC– VBAT 关断隔值电压 |
电源从低到高时 |
100 |
mV |
||
电源从高到低时 |
30 |
mV |
||||
ITERM |
涓流电流充电时关断隔值电流 |
RPROG= 10K |
0.1 |
mA |
||
RPROG= 2K |
0.1 |
mA |
||||
VPROG |
PROG脚电压 |
RPROG= 10K, 充电 |
1.03 |
V |
||
ICHRG |
CHRG 脚弱下拉电流 |
VCHRG = 5V |
20 |
µA |
||
VCHRG |
CHRG 脚输出低电压 |
ICHRG= 5mA |
0.35 |
V |
||
ΔVRECHRG |
二次电池隔值电压 |
VFLOAT - VRECHRG |
100 |
mV |
||
TLIM |
恒温条件下结温 |
120 |
°C |
|||
tSS |
软启动时间 |
IBAT= 0 to 1000V/RPROG |
100 |
µs |
||
tRECHARGE |
二次充电比较器的滤波器滞后时间 |
VBAT 由高到低 |
2 |
ms |
||
tTERM |
终止充电比较器的滤波器滞后时间 |
IBAT 降至ICHG/10 |
1000 |
µs |
||
IPROG |
PROG脚上拉电流 |
1 |
µA |
MBRD340RLG |
MBRD340T4 |
MBRD340T4G |
MBRD350G |
MBRD350RLG |
MBRD350T4 |
MBRD350T4G |
MBRD360G |
MBRD360RLG |
MBRD360T4 |
MBRD360T4G |
MBRD5H100T4G |
MBRD620CTT4G |
MBRD630CTT4G |
MBRD640CTT4 |
MBRD640CTT4G |
MBRD650CTG |
MBRD650CTT4G |
MBRD5660CTG |
MBRD660CTRLG |
MBRD660CTT4 |
MBRD660CTT4G |
MBRD835LG |
MBRD835LT4 |
MBRD835LT4G |
MBRF10H150CTG |
MBRF20100CT |
MBRF20100CTG |
MBRF20200CT |
MBRF20200CTG |
MBRF2045CTG |
MBRF2060CT |
MBRF2060CTG |
MBRF20H100CTG |
MBRF20H150CTG |
MBRF20L45CTG |
MBRF2545CT |
MBRF2545CTG |
MBRF30H100CTG |
MBRF30H150CTG |
MBRF30H60CTG |
MBRF30L45CTG |
MBRF40250TG |
MBRM110ET1G |
MBRM110ET3G |
MBRM110LT1G |
MBRM110LT3G |
MBRM120ET1G |
MBRM120ET3G |
MBRM120LT1 |
MBRM120LT1G |
MBRM120LT3 |
MBRM120LT3G |
MBRM130LT1G |
MBRM130LT3 |
MBRM130LT3G |
MBRM140T1 |
MBRM140T1G |
MBRM140T3 |
MBRM140T3G |
MBRS1100T3 |
MBRS1100T3G |
MBRS120T3 |
MBRS120T3G |
MBRS130LT3 |
MBRS130LT3G |
MBRS130T3G |
MBRS140LT3G |
MBRS140LT3 |
MBRS140T3G |
MBRS1540T3G |
MBRS190T3 |
MBRS190T3G |
MBRS2040LT3 |
MBRS2040LT3G |
MBRS230LT3G |
MBRS240LT3 |
MBRS240LT3G |
MBRS260LT3G |
MBRS2H100T3G |
MBRS3100T3G |
MBRS3200T3 |
MBRS3200T3G |
MBRS3201T3G |
MBRS320T3 |
MBRS320T3G |
MBRS330T3G |
MBRS340T3 |
MBRS340T3G |
MBRS360BT3G |
MBRS360T3 |
MBRS360T3G |
MBRS410ET3G |
MBRS410LT3 |
MBRS410LT3G |
MBRS4201T3G |
MBRS540T3 |
MBRS540T3G |
NRVB1035G |
NRVBB1060T4G |
NSR0170P2T5G |
NSR0240P2T5G |
NSR0320MW2T1G |
NSR0320MW2T3G |
NSR0320XV6T1G |
NSR0320XV6T5G |
NSR0340P2T5G |
NSR0520V2T1G |
NSR0530P2T5G |
NSR0620P2T5G |
NSR1020MW2T1G |
NSR1020MW2T3G |
NSR15TW1T2G |
SS16T3G |
SS22T3G |
SS24T3 |
SS24T3G |
SS26T3 |
SS26T3G |
1N5913BRLG |
1N5917BRLG |
1N5920BG |
1N5921BG |
1N5921BRLG |
1N5923BRLG |
1N5924BRLG |
1N5925BRLG |
1N5927BG |
1N5929BG |
1N5929BRLG |
1N5931BRLG |
1N5932BRLG |
BP1601 - BP1601 升压型 LED 恒流驱动芯片 典型应用图 特点: 特点 4.5~24V 的输入电压范围 12V 输入可以驱动7 颗1 瓦 LED 高达90%的系统效率 参数 符号 值 单位 输入电压 VIN -0.3 to +10 V 结温 TJ -40 to +85 °C 电子特性输入电压= 5V; TJ= 25°C; 特别说明除外。 符号 参数 条件 最小 典型 ...
集成电路(integrated circuit)是一种微型电子器件或部件。采用一定的工艺,把一个电路中所需的晶体管、二极管、电阻、电容和电感等元件及布线互连一起,制作在一小块或几小块半导体晶片或介质基片上,然后封装在一个管壳内,成为具有所需电路功能的微型结构;其中所有元件在结构上已组成一个整体,使电子元件向着微小型化、低功耗和高可靠性方面迈进了一大步。它在电路中用字母“IC”表示。集成电路发明者为杰克·基尔比(基于硅的集成电路)和罗伯特·诺伊思(基于锗的集成电路)。当今半导体工业大多数应用的是基于硅的集成电路。 BAS21HT1G BAS21LT1 BAS21LT1G BAS21LT3 BAS21LT3G BAS21SLT1G BAS40-04LT1 BAS40-04LT1G BAS40LT1 BAS40LT1G BAS70-04LT...