供应茂达集成电路APM3055L
| 价 格： | 面议 | |
| 型号/规格： | APM3055L | |
| 品牌/商标： | 茂达 |
| BZX84C62LT1G |
| BZX84C68LT1G |
| BZX84C6V2ET1G |
| BZX84C6V2ET3G |
| BZX84C6V2LT1G |
| BZX84C6V8LT1 |
| BZX84C75LT1G |
| BZX84C7V5LT1G |
| BZX84C8V2LT1G |
| BZX84C9V1ET3G |
| BZX84C9V1LT1 |
| DF6A6.8FUT1G |
| MM3Z10VST1G |
| MM3Z10VT1 |
| MM3Z11VT1G |
| MM3Z12VST1G |
| MM3Z12VT1 |
| MM3Z13VT1G |
| MM3Z15VST1G |
| MM3Z15VT1 |
| MM3Z16VST1G |
| MM3Z16VT1G |
| MM3Z18VST1G |
| MM3Z18VT1 |
| MM3Z18VT1G |
| MM3Z20VT1G |
| MM3Z22VST1G |
| MM3Z22VT1G |
| MM3Z24VT1G |
| MM3Z27VST1G |
| MM3Z27VT1G |
| MM3Z2V4T1G |
| MM3Z2V7T1G |
| MM3Z33VST1G |
| MM3Z33VT1G |
| MM3Z33VT3G |
| MM3Z36VT1G |
| MM3Z39VT1G |
| MM3Z3V0T1G |
| MM3Z3V3ST1G |
| MM3Z3V3T1G |
| MM3Z3V6T1G |
| MM3Z3V9ST1 |
| MM3Z3V9ST1G |
| MM3Z3V9T1G |
| MM3Z43VT1 |
| MM3Z4V3ST1G |
| MM3Z4V7ST1G |
| MM3Z5V1ST1G |
| MM3Z5V1T1G |
| MM3Z5V6ST1G |
| MM3Z5V6T1G |
| MM3Z6V2ST1G |
| MM3Z6V2T1G |
| MM3Z6V8ST1G |
| MM3Z6V8T1 |
| MM3Z7V5ST1G |
| MM3Z7V5T1G |
| MM3Z8V2ST1G |
| MM3Z8V2T1G |
| MM3Z9V1ST1G |
| MM3Z9V1T1G |
| MM5Z10VT1G |
| MM5Z12VT1G |
| MM5Z15VT1G |
| MM5Z16VT1G |
| MM5Z18VT1G |
| MM5Z20VT1G |
| MM5Z24VT1G |
| MM5Z27VT1G |
| MM5Z2V4ST1G |
| MM5Z2V4T1G |
| MM5Z2V7T1G |
| MM5Z33VT1G |
| MM5Z36VT1G |
| MM5Z3V0T1G |
| MM5Z3V3T1G |
| MM5Z3V6T1G |
| MM5Z47VT1G |
| MM5Z4V3T1G |
| MM5Z4V7ST1G |
| MM5Z4V7ST5G |
| MM5Z4V7T1G |
| MM5Z5V1ST1G |
| MM5Z5V1T1G |
| MM5Z5V6ST1G |
| MM5Z5V6T1G |
| MM5Z6V2ST1G |
| MM5Z6V2T1G |
| MM5Z6V8ST1G |
| MM5Z6V8T1G |
| MM5Z7V5T1G |
| MM5Z8V2ST1G |
| MM5Z8V2T1G |
| MM5Z9V1ST1G |
| MM5Z9V1T1G |
| MMBZ15VALT1 |
| MMBZ15VALT1G |
| MM5Z15VDLT1 |
| MMBZ15VDLT3G |
| MMBZ18VALT1 |
| MMBZ20VALT1 |
| MMBZ20VALT1G |
| MMBZ27VALT1 |
| MMBZ27VCLT1 |
| MMBZ33VALT1G |
| MMBZ5221BLT1G |
| MMBZ522BLT1G |
| MMBZ5223BLT1G |
| MMBZ5225BLT1G |
| MMBZ5226BLT1G |
| MMBZ5227BLT1G |
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 柯菱
- 电话：0755-83041767/83372015/82716726
- 传真：0755-82716726
- 手机：13510940754
- QQ ：
供应INTEL集成电路E28F008SA85
信息内容：1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B Y High-Integration Blocked Architecture ÐOne 8 KB Boot Block w/Lock Out ÐTwo 4 KB Parameter Blocks ÐOne 112 KB Main Block Y 100,000 Erase/Program Cycles Per Block Y Simplified Program and Erase ÐAutomated Algorithms via On-Chip Write State Machine (WSM) Y SRAM-Compatible Write Interface Y Deep Power-Down Mode Ð0.05 mA ICC Typical Ð0.8 mA IPP Typical Y 12.0V g5% VPP Y High-Performance Read Ð70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time Ð5.0V g10% VCC Y Hardware Data Protection Feature ÐErase/Write Lockout during Power Transitions Y Advanced Packaging, JEDEC Pinouts Ð32-Pin PDIP Ð32-Lead PLCC, TSOP Y ETOXTM II Nonvolatile Flash Technology ÐEPROM-Compatible Process Base ÐHigh-Volume Manufacturing Experience Y Extended Temperature Options 1SMA5939BT3G ...
供应ON集成电路NUF8402MNT4G
信息内容：工作范围 参数 符号 值 单位 输入电压 VIN -0.3 to +10 V 结温 TJ -40 to +85 °C 电子特性输入电压= 5V; TJ= 25°C; 特别说明除外。 符号 参数 条件 最小 典型 单位 VCC ...
