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无锡固电ISC供应2SC3892三极管

价 格: 4.80
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SC3892
应用范围:放大
材料:硅(Si)
极性:NPN型
结构:平面型
封装形式:直插型
封装材料:塑料封装

DESCRIPTION                                             

·High Breakdown Voltage-

VCBO= 1400V (Min)

·High Switching Speed

·Low Saturation Voltage

·Built-in Damper Diode

 

 

APPLICATIONS

·Designed for horizontal deflection output applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                        

1400

V

VCEO

Collector-Emitter Voltage                        

600

V

VEBO

Emitter-Base Voltage

   5

V

IC

Collector Current- Continuous

7

A

ICM

CollectorCurrent- Peak

14

A

IB

Base Current- Continuous

3.5

A

PC

Collector Power Dissipation

@ TC=25

50

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

5

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1.2A

 

 

5.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1.2A

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

 

 

10

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

66

 

200

mA

hFE

DC Current Gain

IC= 1A; VCE= 5V

8

 

 

 

VECF

C-E Diode Forward Voltage

IF= 5A

 

 

2.0

V

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 10V

 

3

 

MHz

COB

Output Capacitance

IE= 0; VCB= 10V;ftest=1.0MHz

 

210

 

pF

Switching Times , Resistive load

tstg

Storage Time

ICP= 5A, IB1= 1A; IB2= -2A;

RL= 40Ω

 

 

2.5

μs

tf

Fall Time

 

 

0.2

μs

 

无锡固电半导体股份有限公司
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  • 所属城市:江苏 无锡
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  • 联系人: 王燕
  • 电话:0510-85346980
  • 传真:0510-85346750
  • 手机:15961889150
  • QQ :QQ:2207083234QQ:983830626
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min)·High Power Dissipation·High Current Capability APPLICATIONS·Audio power amplifier, power switching applications.·DC-DC converter and regulator applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERMAXUNITVCBOCollector-Base Voltage 100VVCEOCollector-Emitter Voltage 80VVEBOEmitter-Base Voltage10VICCollector Current-Continuous30AIEEmitter Current-Continuous-30AIBBase Current-Continuous5APCCollector Power Dissipation@TC=25℃200WTjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA; RBE=∞80 VV(BR)EBOEmitter-Base Breakdown VoltageIE= 50mA; IC= 010 VVCE(sat)Collector-Emitter Saturation VoltageIC= 15A; IB= 3A 1.5VVBE(sat)B...

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