供应MOS管2N60/FQU2N60C
| 价 格： | 0.60 | |
| 封装外形： | CER-DIP/陶瓷直插 | |
| 型号/规格： | 2N60/FQU2N60C | |
| 材料： | N-FET硅N沟道 | |
| 用途： | S/开关 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 沟道类型： | N沟道 | |
| 种类： | 绝缘栅(MOSFET) | |
| 导电方式： | 增强型 |
原装现货
| Features •2.0A, 600V, RDS(on) = 4.7? @VGS = 10 V •Low gate charge ( typical 9.0 nC) •Low Crss ( typical 5.0 pF) •Fast switching •100% avalanche tested •Improved dv/dt capability |
| PN532 |
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 邹荣财
- 电话：86 0755 28580524
- 传真：86 0755 28580524
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肖特基二极管SR1100
信息内容：FEATURESMECHANICAL DATA* Low forward voltage drop* High current capability* High reliability* High surge current capability* Epitaxial construction* Case: Molded plastic* Epoxy: UL 94V-0 rate flame retardant* Lead: Axial leads, solderable per MIL-STD-202, method 208 guranteed* Polarity: Color band denotes cathode end* Mounting position: Any* Weight: 0.34 grams"
供应N沟道场效应管STP75NF75
信息内容：产品应用：这一系列的MOSFET，极大的减小了输入电容和栅极充电电流， 因此它们非常适合用于通信和计算机的高性能。 高频率独立DC－DC转换器的初级变换摸块之中； 同时，它们也可以用于任何低栅极驱动的电路中， 如：电动自行车充电电路DescriptionThis Power MOSFET series realized withSTMicroelectronics unique STripFET™ processhas specifically been designed to minimize inputcapacitance and gate charge. It is thereforesuitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DCconverters for Telecom and Computerapplications. It is also intended for anyapplications with low gate drive requirements.dzsc/19/1210/19121053.jpg"
