无锡固电ISC供应达林顿功率晶体管T30F
| 价 格： | 4.50 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC/ISCSEMI | |
| 型号/规格： | T30F | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 集电极允许电流ICM： | 10（A） | |
| 集电极耗散功率PCM： | 80（W） | |
| 结构： | 平面型 | |
| 封装形式： | TO-220F | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·High DC Current Gain-
: hFE= 1000V(Min.) @IC= 3A
APPLICATIONS
·Switching for dynamotor excitation
·Audio, regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 300 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 10 | A |
IB | Base Current-Continuous | 1 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 30mA; IB= 0 | 300 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 500 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 6mA |
|
| 2.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 6mA |
|
| 3.0 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 100 | μA |
hFE | DC Current Gain | IC= 3A; VCE= 2V | 1000 |
|
|
|
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
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无锡固电ISC 供应2SA626三极管
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