价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA764 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·LowCollector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 4A
·Complement to Type 2SC1444
APPLICATIONS
·Designed for general purpose power amplifier applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -6 | A |
PC | Total Power Dissipation @ TC=25℃ | 40 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -60 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -1mA; IE= 0 | -60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A; VCE= -4V | 50 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -12V |
| 10 |
| MHz |
"
Features ·With TO-220AB insulated package·Suitables for general purpose applications where gate high sensitivity isrequired. Application on 4Q such as phase control and static switching.ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERMINUNITVDRMRepetitive peak off-state voltage 600VVRRMRepetitive peak reverse voltage 600VIT(RMS)RMS on-state current (full sine wave)Tj=105℃8AITSMNon-repetitive peak on-state current tp=20ms80ATjOperating junction temperature110℃TstgStorage temperature-45~150℃Rth(j-c)Thermal resistance, junction to case2.5℃/WRth(j-a)Thermal resistance, junction to ambient60℃/W ELECTRICAL CHARACTERISTICS (TC=25℃unless otherwise specified)SYMBOLPARAMETERCONDITIONSMAXUNITIRRMRepetitive peak reverse current VR=VRRM,VR=VRRM, Tj=110℃0.010.5mAIDRMRepetitive peak off-state currentVD=VDRM,VD=VDRM, Tj=110℃0.010.5mAIGTGate trigger currentⅠVD=12V; RL= 30Ω25 mAⅡ25Ⅲ25Ⅳ50IHHolding currentIGT= 0.1A, Gate Open25...
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V(Min) APPLICATIONS·Solenoid/ relay drivers·Motor control·Electronic automotive ignition Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCESCollector-Emitter Voltage VBE= 0450VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage5VICCollector Current6AICMCollector Current-peak10AIBBase Current1APCCollector Power Dissipation@TC=25℃60WTjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case2.08℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0400 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 2.5A; IB= 50mA 1.8VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 4A; IB= 200mA 1.8VVBE(sat)-1Base-Emitter Saturation VoltageIC= 2.5A; IB= 50mA 2.2VVBE(sat)-2Ba...