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无锡固电ISC供应可控硅 BTA08-600C

价 格: 2.00
品牌/商标:ISC/ISCSEMI
型号/规格:BTA08-600C
控制方式:单向
极数:三极
封装材料:塑料封装
封装外形:TO-220
关断速度:普通
散热功能:带散热片
频率特性:中频
功率特性:中功率
额定正向平均电流:8(A)
控制极触发电流:25(mA)
稳定工作电流:80(A)
反向重复峰值电压:600(V)

Features                                            

·With TO-220AB insulated package

·Suitables for general purpose applications where gate high sensitivity is

required. Application on 4Q such as phase control and static switching.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage 

600

V

VRRM

Repetitive peak reverse voltage 

600

V

IT(RMS)

RMS on-state current (full sine wave)Tj=105

8

A

ITSM

Non-repetitive peak on-state current tp=20ms

80

A

Tj

Operating junction temperature

110

Tstg

Storage temperature

-45~150

Rth(j-c)

Thermal resistance, junction to case

2.5

/W

Rth(j-a)

Thermal resistance, junction to ambient

60

/W

 

ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current 

VR=VRRM,

VR=VRRM, Tj=110

0.01

0.5

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=110

0.01

0.5

mA

IGT

Gate trigger current

VD=12V; RL= 30Ω

25 

mA

25

25

50

IH

Holding current

IGT= 0.1A, Gate Open

25

mA

VGT

Gate trigger voltage all quadrant

VD=12V; RL= 30Ω

1.3

V

VTM

On-state voltage

IT= 11A; tp= 380μs

1.55

V

无锡固电半导体股份有限公司
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