价 格: | 面议 | |
封装外形: | CER-DIP/陶瓷直插 | |
型号/规格: | IRFB52N15DPBF FB52N15D | |
材料: | N-FET硅N沟道 | |
用途: | NF/音频(低频) | |
品牌/商标: | IR/国际整流器 | |
沟道类型: | N沟道 | |
种类: | 结型(JFET) | |
导电方式: | 耗尽型 |
【墨西哥IR进口原装场效应管/三极管】IRFB52N15DPBF FB52N15D
【墨西哥IR进口原装场效应管/三极管】IRFB52N15DPBF FB52N15D
IRFB52N15DPBF FB52N15D产品规格 参数
Datasheets IRFB52N15DPbF, IRFS(L)52N15DPbF
Product Photos TO-220AB PKG
Catalog Drawings IR Hexfet TO-220AB
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series HEXFET®
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25° C 51A
Rds On (Max) @ Id, Vgs 32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 89nC @ 10V
Input Capacitance (Ciss) @ Vds 2770pF @ 25V
Power - Max 3.8W
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1297 (US2011 Interactive)
1297 (US2011 PDF)
Other Names *IRFB52N15DPBF
IR场效应管产品图片dzsc/19/0926/19092675.jpgdzsc/19/0926/19092675.jpgdzsc/19/0926/19092675.jpgdzsc/19/0926/19092675.jpgIR场效应管 墨西哥产地场效应管 IRF5305PBF 原装/散新IR场效应管 墨西哥产地场效应管 IRF5305PBF 原装/散新 IR场效应管 IRF120.IRF130.IRF140.IRF150.IRF220.IRF230.IRF231.IRF240. IRF250.IRF251.IRF2807.IRF320.IRF330.IRF360.IRF3710.IRF420. IRF440.IRF450.IRF451.IRF460.IRF511.IRF520.IRF530.IRF540. IRF541.IRF610.IRF620.IRF630.IRF640.IRF710.IRF720.IRF722. IRF730.IRF731.IRF740.IRF820.IRF830.IRF840.IRF9130.IRF9150. IRF9510.IRF9530.IRF9630.IRF9640.IRBC30.IRBC40.IRFI540A. IRFI640.IRFI640A.IRFI710A.IRFI730A.IRFI740A.IRFI820A. IRFI830A.IRFI840A.IRFI9520G.IRFI9530G.IRFI9540G...IR系列二三极管,场效应管供应质量全新原装,环保无铅.散新拆机包测,质量问题包退换! 公司地址我所在位置(标题 图片)dzsc/19/0926/19092675.jpg联系方式联系地址:广东省 深圳市福田区 华强三店3A132(佳和大厦)联系电话:13410377061传真号码:86 0755 82894329dzsc/19/0926/19092675.jpg腾讯QQ:838205202 阿里旺旺:...
原装场效应二三极管系列 2SK2699 K2699 原装场效应二三极管系列 2SK2699 K2699 2SK2699 K2699产品规格 参数 Datasheets 2SK2699Mosfets Prod GuideStandard Package 50Category Discrete Semiconductor ProductsFamily FETs - SingleSeries -FET Type MOSFET N-Channel, Metal OxideFET Feature StandardDrain to Source Voltage (Vdss) 600VCurrent - Continuous Drain (Id) @ 25° C 12ARds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10VVgs(th) (Max) @ Id 4V @ 1mAGate Charge (Qg) @ Vgs 58nC @ 10VInput Capacitance (Ciss) @ Vds 2600pF @ 10VPower - Max 150WMounting Type Through HolePackage / Case TO-3P-3, SC-65-3Supplier Device Package TO-3P(N)Packaging Tube