价 格: | 0.52 | |
品牌: | JBL | |
型号: | BT136-600E | |
控制方式: | 双向 | |
极数: | 三极 | |
封装材料: | 塑料封装 | |
封装外形: | TO-220 | |
关断速度: | 普通 | |
散热功能: | 不带散热片 | |
频率特性: | 低频 | |
功率特性: | 小功率 | |
额定正向平均电流: | 4(A) | |
控制极触发电流: | 1-6(mA) | |
稳定工作电流: | 4.5(A) | |
反向重复峰值电压: | 600(V) | |
电压: | 600 | |
触发电流: | ≤4 | |
电流: | 4 |
中国可控硅批发商 |
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dzsc/19/0843/19084399.jpg 公司中文域名:杰宝莱公司网络实名:中国可控硅批发商 贴片可控硅公司主页:http://jbl-sz.com阿里巴巴网站:http://jepoler.cn.alibaba.com http://jblchj.cn.alibaba.comQQ:118146485SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDRMRepetitive peak off-statevoltages --5005001-6006001-800800VIT(RMS)ITSMRMS on-state current Non-repetitive peakfull sine wave; Tmb £99 °C full sine wave; Tj= 25 °C prior to-16A on-state currentsurge t = 20 ms-140A t = 16.7 ms-150AI2tI2t for fusingt = 10 ms-98A2sdIT/dtRepetitive rate of rise ofITM= 20 A; IG= 0.2 A; on-state current afterdIG/dt = 0.2 A/ms triggeringT2 G -50A/ms T2 G-T2- G---50 50A/ms A/ms T2- G -10A/msIGMPeak gate current -2AVGMPeak gate voltage -5VPGMPeak gate power -5WPG(AV)TstgTjAverage gate power Storage temperature Operating junctionover any 20 ms period--40 -0.5 150 125W °C °C temperature
dzsc/19/0844/19084404.jpg公司中文域名:杰宝莱公司网络实名:中国可控硅批发商 贴片可控硅公司主页:http://jbl-sz.com阿里巴巴网站:http://jepoler.cn.alibaba.com http://jblchj.cn.alibaba.comQQ:908152203QUICK REFERENCE DATA SYMBOLPARAMETERMAX.MAX.MAX.UNIT BT138-500E600E800E VDRMRepetitive peak off-state voltages500600800VIT(RMS)ITSMRMS on-state current Non-repetitive peak on-state12 9512 9512 95A A current LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT -500-600-800 VDRMRepetitive peak off-state -50016001800V voltages AIT(RMS)ITSMRMS on-state current Non-repetitive peakfull sine wave; Tmb £99 °C full sine wave; Tj= 25 °C prior to-12 on-state currentsurge t = 20 ms-95A t = 16.7 ms-105AI2tI2t for fusingt = 10 ms-45A2sdIT/dtRepetitive rate of rise ofITM= 20 A; IG= 0.2 A; on-state current aft...