价 格: | 面议 | |
封装外形: | TO-220-3 | |
型号/规格: | FQP47P06 | |
材料: | ALGaAS铝镓砷 | |
用途: | A/宽频带放大 | |
品牌/商标: | FAIRCHILD/仙童 | |
沟道类型: | MOSFET P 通道,金属氧化物 | |
种类: | 结型(JFET) | |
导电方式: | 耗尽型 |
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FSC仙童场效应管 FQP47P06 全新原装/拆机散新场效应管
FSC仙童场效应管 FQP47P06 全新原装/拆机散新场效应管
FQP47P06产品规格 参数 PDF
Datasheets FQP47P06
Product Photos TO-220-3, TO-220AB
Product Training Modules High Voltage Switches for Power Processing
Catalog Drawings MOSFET TO-220F
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series QFET™
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25° C 47A
Rds On (Max) @ Id, Vgs 26 mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max 160W
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Packaging Tube
Catalog Page 1387 (US2011 PDF)
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制造商: Fairchild Semiconductor 产品种类: MOSFET 功率 RoHS: 详细信息 配置: Single 晶体管极性: N-Channel 电阻汲极/源极 RDS(导通): 1.2 Ohms 正向跨导 gFS(值/最小值) : 8.7 S 汲极/源极击穿电压: 600 V 闸/源击穿电压: /- 30 V 漏极连续电流: 7.5 A 功率耗散: 48 W 工作温度: 150 C 安装风格: Through Hole 封装 / 箱体: TO-220F 封装: Tube 最小工作温度: - 55 C 零件号别名: FQPF8N60C_NL
进口原装场效应管 IRFP4668 IRFP4668PBF【热卖中】 进口原装场效应管 IRFP4668 IRFP4668PBF【热卖中】 IRFP4668 IRFP4668PBF产品规格 参数 Datasheets IRFP4668PBFProduct Photos TO-247-3Catalog Drawings IR Hexfet TO-247ACStandard Package 25Category Discrete Semiconductor ProductsFamily FETs - SingleSeries HEXFET®FET Type MOSFET N-Channel, Metal OxideFET Feature StandardDrain to Source Voltage (Vdss) 200VCurrent - Continuous Drain (Id) @ 25° C 130ARds On (Max) @ Id, Vgs 9.7 mOhm @ 81A, 10VVgs(th) (Max) @ Id 5V @ 250µAGate Charge (Qg) @ Vgs 241nC @ 10VInput Capacitance (Ciss) @ Vds 10720pF @ 50VPower - Max 520WMounting Type Through HolePackage / Case TO-247-3Supplier Device Package TO-247ACPackaging TubeCatalog Page 1298 (US2011 Interactive)1298 (US2011 PDF)"