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现货热销仙童场效应管FQA19N60

价 格: 面议
品牌:FAIRCHILD/仙童
型号:FQA19N60
种类:绝缘栅(MOSFET)
沟道类型:N沟道
导电方式:增强型
用途:NF/音频(低频)
封装外形:CER-DIP/陶瓷直插
材料:SIT静电感应
开启电压:1(V)
夹断电压:1(V)
跨导:1(μS)
极间电容:1(pF)
低频噪声系数:1(dB)
漏极电流:1(mA)
耗散功率:1(mW)

仙童 MOS IGBT 场效应管

Manufacturer:Fairchild Semiconductor 
Product Category:MOSFETs 
RoHS:dzsc/19/0782/19078216.jpg Details 
Product:General Purpose MOSFETs 
Configuration:Single 
Package / Case:TO-3P 
Transistor Polarity:N-Channel 
Drain-Source Breakdown Voltage:600 V 
Continuous Drain Current:18.5 A 
Power Dissipation:300000 mW 
Forward Transconductance gFS (Max / Min):16 S 
Resistance Drain-Source RDS (on):0.38 Ohm @ 10 V 
Typical Fall Time:135 ns 
Typical Rise Time:210 ns 
Typical Turn-Off Delay Time:150 ns 
Packaging:Tube 
Gate-Source Breakdown Voltage: /- 30 V 
Maximum Operating Temperature:150 C 
Minimum Operating Temperature:- 55 C 
Type:MOSFET

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