价 格: | 5.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD1545 | |
应用范围: | 功率 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Color TV horizontal output applications
·Switching regulator output applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 5 | A |
IB | Base Current- Continuous | 2.5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4.0A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4.0A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V ; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.1A ; VCE= 10V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest= 1.0MHz |
| 165 |
| pF |
tf | Fall Time | ICP= 4A , IB1(end)= 0.8A |
| 0.5 | 1.0 | μs |
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 80V(Min)·Collector Current-IC= 7A(Max.)·Low Collector Saturation Voltage:VCE(sat)= 0.3V(Max.)@ IC= 3.5A APPLICATIONS·Designed for use in drivers such as DC/DC convertersand actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 100VVCEOCollector-Emitter Voltage 80VVEBOEmitter-Base Voltage7VICCollector Current-Continuous7AICMCollector Current-Peak14AIBBase Current-Continuous1.5AIBMBase Current-Peak2APTTotal Power Dissipation@ TC=25℃25WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case5℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 080 VVCE(sat)Collector-Emi...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min)·Good Linearity of hFE·Complement to Type 2SA1670 APPLICATIONS·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 120VVCEOCollector-Emitter Voltage 80VVEBOEmitter-Base Voltage6VICCollector Current-Continuous6AIBBase Current-Continuous3APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA; IB= 080 VVCE(sat)Collector-Emitter Saturation VoltageIC= 2A; IB= 0.2A 1.5VICBOCollector Cutoff CurrentVCB= 120V; IE= 0 10μAIEBOEmitter Cutoff CurrentVEB= 6V; IC= 0 10μAhFEDC Current GainIC= 2A; VCE= 4V50 fTCurrent-Gain&mda...