价 格: | 2.60 | |
品牌: | IR/国际整流器 | |
型号: | IRFZ48VPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | L/功率放大 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 10(V) | |
夹断电压: | na(V) | |
跨导: | na(μS) | |
极间电容: | na(pF) | |
低频噪声系数: | na(dB) | |
漏极电流: | na(mA) | |
耗散功率: | na(mW) |
Parameter | Value |
Package | TO-220AB |
Circuit | Discrete |
VBRDSS (V) | 60 |
VGs Max (V) | 20 |
RDS(on) Max 10V (mOhms) | 12.0 |
ID @ TC = 25C (A) | 72 |
ID @ TC = 100C (A) | 51 |
Qg Typ (nC) | 73.3 |
Qgd Typ (nC) | 24.0 |
Rth(JC) (K/W) | 1.00 |
Power Dissipation @ TC = 25C (W) | 150 |
Part Status | Active |
Environmental Options Available | PbF and Leaded |
Package Class Can | Thru-Hole |
Product DetailPart Num:IXFH12N90Description:POWER DEVICES > DISCRETE MOSFETs > N-Channel: Power MOSFETs w/Fast Intrinsic Diode (HiPerFETs) > Standard HiperFETs (50V to 1200V)Configuration:SinglePackage Style: TO-247Status:Not for New Designs: Contact the factory for lead times (part is still available for purchase).Support Docs:DataSheet Recommended AlternativesCompeting PartsParameter
Part Num:IXFP180N10T2Description:POWER DEVICES > DISCRETEMOSFETs > N-Channel: Trench Gate Power MOSFETs > TrenchT2HiperFETsConfiguration:SinglePackage Style: TO-220Status:Active PartSupport Docs:DataSheet RecommendedAlternativesCompetingPartsParameter