价 格: | 面议 | |
品牌: | IXYS/艾赛斯 | |
型号: | IXFP180N10T2 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | D/变频换流 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 10(V) | |
夹断电压: | na(V) | |
跨导: | na(μS) | |
极间电容: | na(pF) | |
低频噪声系数: | na(dB) | |
漏极电流: | na(mA) | |
耗散功率: | na(mW) |
Part Num: | IXFP180N10T2 | |
Description: | POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench Gate Power MOSFETs > TrenchT2 HiperFETs | |
Configuration: | Single | |
Package Style: | TO-220 | |
Status: | Active Part | |
Support Docs: |
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