完全替代ST75NF75平面工艺MOS管SVD75N08T
| 价 格： | 1.60 | |
| 封装外形： | CHIP/小型片状 | |
| 型号/规格： | SVD75N08T | |
| 材料： | ALGaAS铝镓砷 | |
| 用途： | L/功率放大 | |
| 品牌/商标： | SILAN/士兰微 | |
| 沟道类型： | N沟道 | |
| 种类： | 绝缘栅(MOSFET) | |
| 导电方式： | 增强型 |
| Part Number | Status | Process | Package | Configuration | Popular Application | Type | ESD Diode | Schottky Diode | Schottky Type | VDS(V) | VGS(±V) | ID(A) | PD(W) | RDS(ON)(mΩ max) at VGS= | VGS(th) (max V) | Ciss (pF) | Crss (pF) | Qg (nC) | Qgd (nC) | Td(on) (ns) | Td(off) (ns) | |||||
| 25°C | 70°C | 25°C | 70°C | 10V | 4.5V | 2.5V | 1.8V | |||||||||||||||||||
| SVD75N08T | Sample | S-Rin | TO-220-3L | Single | Low Voltage | N | No | No | 75 | 20 | 75 | 230 | 12 | 4 | 4395 | 91.1 | 107.77 | 43.21 | 71.33 | 188 | ||||||
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长电代理:原装三极管TO-251 D882
信息内容：D882 TRANSISTOR (NPN)FEATURESPower dissipationMAXIMUM RATINGS (TA=25℃ unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 APC Collector Power Dissipation 1.25 WTJ Junction Temperature 150 ℃Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 VEmitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 VCollector cut-off current ICBO VCB= 40 V, IE=0 1 μACollector cut-off current ICEO VCE= 30 V, IB=0 10 μAEmitter cut-off current IEBO VEB= 6 V, IC=0 1 μADC current gain hFE VCE= 2 V, IC= 1A 60 400Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 VBase-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A ...
IR原装进口MOS管IRFR5505
信息内容：Cross ReferenceIR Part #RecommendedIR Part #DescriptionPartStatusReplacementTypeIRFR5505PBFIRFR5505PBFMOSFET, P-CHANNEL, -55V, -18A, 110 mOhm, 21.3 nC Qg, D-PakActiveDIRECTSpecificationsParameterValuePackage D-PakCircuit DiscreteVBRDSS (V) -55VGs Max (V) 20RDS(on) Max 10V (mOhms) 110.0ID @ TC = 25C (A) -18ID @ TC = 100C (A) -11Qg Typ (nC) 21.3Qgd Typ (nC) 10.0Rth(JC) (C/W) 2.2Power Dissipation @ TC = 25C (W) 57Part Status ActiveEnvironmental Options Available PbF and LeadedPackage Class Can Surface Mount with Leads
